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| Small Signal Transistor Arrays UNA0228 (UN228) Silicon PNP epitaxial planar type (2 elements) Silicon NPN epitaxial planar type (2 elements) Unit: mm For motor drives 10 0.40.1 9876 0.2+0.1 -0.0 Features * Small and lightweight * Low power consumption * Low voltage drive * With 4 elements incorporated 5.50.3 7.70.3 12 45 0.5 1 2 345 0.90.1 6.50.3 0.8 1.50.1 1.5 +0.2 -0.1 Absolute Maximum Ratings Ta = 25C Parameter PNP Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current NPN Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Overall Total power dissipation Junction temperature Storage temperature * 12 Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg Rating -12 -10 -7 -1 -2.5 12 10 7 1 2.5 0.5 150 -55 to +150 Unit V V V A A V V V A A W C C 1 2 1: Emitter 2: Base 3: Collector 4: Base 5: Emitter 6: Emitter 7: Base 8: Collector 9: Base 10: Emitter SO10-G1 Package Marking Symbol: UN228 Internal Connection 10 9 8 7 6 3 4 5 Note) *: When the dissipation on one device is TC = 25C Note) The part number in the parenthesis shows conventional part number. Publication date: March 2004 SJK00049BED 0.50.2 1 UNA0228 Electrical Characteristics Ta = 25C 3C * PNP Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Collector-emitter saturation Transition frequency Collector output capacitance (Common base, input open circuited) Forward voltage *2 voltage *1 Symbol VCBO VCEO VEBO ICBO hFE VCE(sat) fT Cob VF Conditions IC = -10 A, IE = 0 IC = -1 mA, IB = 0 IE = -10 A, IC = 0 VCB = -10 V, IE = 0 VCE = -1 V, IC = - 0.5 A IC = -1 A, IB = -30 mA VCB = -6 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz IF = -1 A 200 - 0.2 150 65 -1.5 Min -12 -10 -7 -1 800 - 0.3 Typ Max Unit V V V A V MHz pF V * NPN Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) Forward voltage *2 Symbol VCBO VCEO VEBO ICBO hFE VCE(sat) fT Cob VF Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 1 V, IC = 0.5 A IC = 1 A, IB = 30 mA VCB = 6 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz IF = 1 A 200 0.2 150 50 1.5 Min 12 10 7 1 800 0.3 Typ Max Unit V V V A V MHz pF V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Application to the built-in diode 2 SJK00049BED UNA0228 Common characteristics chart PT Ta 0.6 Total power dissipation PT (W) 0.5 0.4 0.3 0.2 0.1 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of PNP transistor block IC VCE -4.8 Ta = 25C -6 IC VBE VCE = -1 V VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -10 IC / IB = 100/3 -4.0 -5 Collector current IC (A) Collector current IC (A) -1 Ta = 75C 25C -25C -3.2 IB = -14 mA -2.4 -12 mA -10 mA -8 mA -6 mA -4 mA -2 mA 0 0 -2 -4 -6 -8 -10 -12 -4 Ta = 75C 25C -25C -3 -10-1 -1.6 -2 -10-2 - 0.8 -1 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 -2.4 -10-3 - 0.01 - 0.1 -1 -10 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) Collector current IC (A) hFE IC VCE = -1 V Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 240 f = 1 MHz IE = 0 Ta = 25C 600 Forward current transfer ratio hFE 500 Ta = 75C 25C 300 -25C 200 400 160 120 200 80 100 40 0 - 0.01 - 0.1 -1 -10 0 - 0.1 -1 -10 -100 Collector current IC (A) Collector-base voltage VCB (V) SJK00049BED 3 UNA0228 Characteristics charts of NPN transistor block IC VCE 4.8 Ta = 25C 6 IC VBE VCE = 1 V VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 10 IC / IB = 100/3 4.0 5 Collector current IC (A) Collector current IC (A) 1 Ta = 75C 10-1 25C -25C 3.2 IB = 14 mA 12 mA 10 mA 8 mA 4 Ta = 75C 25C -25C 2.4 3 1.6 6 mA 4 mA 2 10-2 0.8 2 mA 0 1 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 2.4 10-3 0.01 0.1 1 10 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) Collector current IC (A) hFE IC VCE = 1 V Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 120 f = 1 MHz IE = 0 Ta = 25C 600 Forward current transfer ratio hFE 500 100 400 Ta = 75C 300 25C -25C 200 80 60 40 100 20 0 0.01 0.1 1 10 0 0.1 1 10 100 Collector current IC (A) Collector-base voltage VCB (V) 4 SJK00049BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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